https://www.sptmicro.com/

Superior process results

• Excellent temperature control from 100-1250C
• Advanced injector technology for optimal gas distribution
• Low O2 load lock maintains controlled wafer environment and ensures repeatability
• Uses qualified process module

Low cost of ownership

• Single or dual-boat configuration
• Modular architecture for fast move in and startup
• Dual-boat configuration eliminates wafer load/unload time
• In-situ clean capability reduces CoO by up to 50%
• Fast temperature ramp/cool option enables up to 30% reduction in process time

System flexibility

• Runs 2 wafer sizes simultaneously with no hardware changes
• Compatible with perforated, bonded and ultra-thin substrates
• Field conversion kits enable fast applications changes

• Wet/dry thermal oxide
• Radical oxidation
• Silicon Nitride (Stoichiometric and low stress)
• TEOS, SiH4 and DCS-based SiO2
• Doped (P, As, B) and un-doped polysilicon
• Atomic Layer Deposition
• Anneal and Cure : 100 to >1200°C
• ONO and ALD Al2O3